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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1435 DESCRIPTION *With TO-3PN package *DARLINGTON *High DC current gain *Complement to type 2SB1031 APPLICATIONS *For low frequency power amplifier and high current switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 100 100 7 15 20 3 100 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain CONDITIONS IC=1mA, RBE=> IE=50mA, IC=0 IC=8A ,IB=16mA IC=15A ,IB=150mA IC=8A ,IB=16mA IC=15A ,IB=150mA VCB=100V, IE=0 VCE=80V, RBE=> IC=8A ; VCE=3V 1000 MIN 100 7 2SD1435 SYMBOL VCEO(SUS) V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO ICEO hFE TYP. MAX UNIT V V 2.0 3.0 2.5 3.5 100 1.0 20000 V V V V A A Switching times ton toff Turn-on time IC = 8 A,IB1 =-IB2 =16mA Turn-off time 8.0 s 2.0 s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1435 Fig.2 Outline dimensions(unindicated tolerance:0.1mm) 3 |
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